Diodes IncorporatedZTX601BJT Darlington
Trans Darlington NPN 160V 1A 1000mW 3-Pin E-Line
| Compliant | |
| EAR99 | |
| NRND | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Single | |
| 1 | |
| 160 | |
| 180 | |
| 10 | |
| 1.9@10mA@1A | |
| 1 | |
| 0.01 | |
| 250 | |
| 1.1@5mA@0.5A|1.2@10mA@1A | |
| 1000@50mA@10V|2000@500mA@10V|1000@1A@10V | |
| 1000 | |
| -55 | |
| 200 | |
| Mounting | Through Hole |
| Package Height | 4.01(Max) |
| Package Width | 2.41(Max) |
| Package Length | 4.77(Max) |
| PCB changed | 3 |
| Standard Package Name | TO |
| Supplier Package | E-Line |
| 3 | |
| Lead Shape | Through Hole |
Diodes Zetex's NPN ZTX601 Darlington transistor is the ideal component to use in situations where a higher current gain is needed. This Darlington transistor array's maximum emitter base voltage is 10 V, while its maximum base emitter saturation voltage is 1.9@10mA@1A V. This product's maximum continuous DC collector current is 1 A, while its minimum DC current gain is 1000@50mA@10 V|2000@500mA@10V|1000@1A@10V. It has a maximum collector emitter saturation voltage of 1.1@5mA@0.5A|1.2@10mA@1A V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 160 V and a maximum emitter base voltage of 10 V. This Darlington transistor array has a minimum operating temperature of -55 °C and a maximum of 200 °C.
| EDA / CAD Models |
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