Microchip TechnologyTN5325K1-GMOSFETs
Trans MOSFET N-CH Si 250V 0.15A 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 250 | |
| ±20 | |
| 0.15 | |
| 7000@10V | |
| 110(Max)@25V | |
| 360 | |
| 25(Max) | |
| 15(Max) | |
| 25(Max) | |
| 20(Max) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.95 mm |
| Package Width | 1.3 mm |
| Package Length | 2.9 mm |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
Make an effective common gate amplifier using this TN5325K1-G power MOSFET from Microchip Technology. Its maximum power dissipation is 360 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Sistemas de drones más inteligentes
Equípese con potentes herramientas y estrategias inteligentes para diseñar los sistemas de drones ágiles, eficaces y modulares del futuro.