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STMicroelectronicsSTGFW20V60DFChip IGBT
Trans IGBT Chip N-CH 600V 40A 52W 3-Pin(3+Tab) TO-3PF Tube
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| EA | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Field Stop|Trench | |
| N | |
| Single | |
| ±20 | |
| 600 | |
| 1.8 | |
| 40 | |
| 0.25 | |
| 52 | |
| -55 | |
| 175 | |
| Industrial | |
| Tube | |
| Mounting | Through Hole |
| Package Height | 26.7(Max) |
| Package Width | 5.7(Max) |
| Package Length | 15.7(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-3PF |
| 3 | |
| Lead Shape | Through Hole |
The STGFW20V60DF IGBT transistor from STMicroelectronics is perfect to use as an electronic switch eliminating the current at the gate. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 52000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes field stop|trench technology.
| EDA / CAD Models |
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