| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| Small Signal | |
| Si | |
| Dual | |
| Enhancement | |
| N|P | |
| 2 | |
| 30 | |
| ±20 | |
| 2.6@N Channel|2@P Channel | |
| 150 | |
| 1.6@N Channel|1.4@P Channel | |
| 1000 | |
| 1@N Channel|10@P Channel | |
| 122@10V@N Channel|226@10V@P Channel | |
| 5.1@10V@N Channel|2.9@10V@P Channel | |
| 5.1@N Channel|2.9@P Channel | |
| 180@15V@N Channel|120@15V@P Channel | |
| 500 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.7 mm |
| Package Width | 1.7 mm |
| Package Length | 2 mm |
| PCB changed | 6 |
| Supplier Package | UF |
| 6 | |
| Lead Shape | Flat |
Make an effective common source amplifier using this SSM6L40TU(TE85L,F) power MOSFET from Toshiba. Its maximum power dissipation is 500 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N|P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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