| RoHS (Unión Europea) | Compliant with Exemption |
| ECCN (Estados Unidos) | EAR99 |
| Estatus de pieza | Active |
| Código HTS | COMPONENTS |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Categoría del producto | Power MOSFET |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 100 |
| Maximum Gate-Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Maximum Continuous Drain Current (A) | 30 |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 1 |
| Maximum Drain-Source Resistance (mOhm) | 15@10V |
| Typical Gate Charge @ Vgs (nC) | 26.5@10V |
| Typical Gate Charge @ 10V (nC) | 26.5 |
| Typical Gate to Drain Charge (nC) | 5.5 |
| Typical Gate to Source Charge (nC) | 5.5 |
| Typical Input Capacitance @ Vds (pF) | 1565@25V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 65@25V |
| Minimum Gate Threshold Voltage (V) | 1.5 |
| Typical Output Capacitance (pF) | 800 |
| Maximum Power Dissipation (mW) | 71000 |
| Typical Fall Time (ns) | 59 |
| Typical Rise Time (ns) | 19 |
| Typical Turn-Off Delay Time (ns) | 18 |
| Typical Turn-On Delay Time (ns) | 7 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 175 |
| Supplier Temperature Grade | Automotive |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 120 |
| Typical Diode Forward Voltage (V) | 0.94 |
| Maximum Diode Forward Voltage (V) | 1.5 |
| Minimum Gate Resistance (Ohm) | 1.1 |
| Maximum Gate Resistance (Ohm) | 3.5 |
| Maximum Positive Gate-Source Voltage (V) | 20 |
| Mounting | Surface Mount |
| Package Height | 2.38(Max) |
| Package Width | 6.22(Max) |
| Package Length | 6.73(Max) |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-252AA |
| Pin Count | 3 |
| Lead Shape | Gull-wing |
