| RoHS (Unión Europea) | Compliant with Exemption |
| ECCN (Estados Unidos) | EAR99 |
| Estatus de pieza | Active |
| Código HTS | 8541.29.00.55 |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Categoría del producto | Power MOSFET |
| Configuration | Single Quad Drain Triple Source |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 20 |
| Maximum Gate-Source Voltage (V) | ±8 |
| Maximum Gate Threshold Voltage (V) | 1 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Continuous Drain Current (A) | 25 |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 1 |
| Maximum Drain-Source Resistance (mOhm) | 9.5@4.5V |
| Typical Gate Charge @ Vgs (nC) | 38@4.5V|62.5@8V |
| Typical Gate to Drain Charge (nC) | 10 |
| Typical Gate to Source Charge (nC) | 4 |
| Typical Reverse Recovery Charge (nC) | 50 |
| Typical Input Capacitance @ Vds (pF) | 2760@10V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 370@10V |
| Minimum Gate Threshold Voltage (V) | 0.4 |
| Typical Output Capacitance (pF) | 405 |
| Maximum Power Dissipation (mW) | 3600 |
| Typical Fall Time (ns) | 38 |
| Typical Rise Time (ns) | 28 |
| Typical Turn-Off Delay Time (ns) | 92 |
| Typical Turn-On Delay Time (ns) | 23 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 40 |
| Typical Diode Forward Voltage (V) | 0.82 |
| Typical Reverse Recovery Time (ns) | 56 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Minimum Gate Resistance (Ohm) | 0.9 |
| Maximum Gate Resistance (Ohm) | 8.8 |
| Maximum Positive Gate-Source Voltage (V) | 8 |
| Mounting | Surface Mount |
| Package Height | 0.93(Max) |
| Package Width | 3.3 |
| Package Length | 3.3 |
| PCB changed | 8 |
| Supplier Package | PowerPAK 1212-SH EP |
| Pin Count | 8 |
