| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±8 | |
| 12 | |
| 33@4.5V | |
| 30@8V|18@4.5V | |
| 1300@10V | |
| 3400 | |
| 20 | |
| 22 | |
| 50 | |
| 20 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.75 |
| Package Width | 2.05 |
| Package Length | 2.05 |
| PCB changed | 6 |
| Supplier Package | PowerPAK SC-70 |
| 6 | |
| Lead Shape | No Lead |
Make an effective common source amplifier using this SIA461DJ-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 3400 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes TrenchFET technology. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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