| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 100 | |
| ±20 | |
| 28 | |
| 41@10V | |
| 54@4.5V|106@10V | |
| 106 | |
| 4600@50V | |
| 5200 | |
| 100 | |
| 20|160 | |
| 100|110 | |
| 15|42 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.07(Max) |
| Package Width | 5.89 |
| Package Length | 4.9 |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | PowerPAK SO EP |
| 8 | |
| Lead Shape | No Lead |
This SI7489DP-T1-GE3 power MOSFET from Vishay can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 5200 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This device utilizes TrenchFET technology. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
Contrarreste eficazmente amenazas de drones
Descubra cómo combinar procesamiento inteligente, detección avanzada y respuesta rápida en un sistema de defensa unificado contra los drones.