| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 5.4 | |
| 58@10V | |
| 13@10V | |
| 13 | |
| 665@15V | |
| 3200 | |
| 10 | |
| 15|65 | |
| 15|20 | |
| 10|15 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.07(Max) |
| Package Width | 3.05 |
| Package Length | 3.05 |
| PCB changed | 8 |
| Supplier Package | PowerPAK 1212 EP |
| 8 | |
| Lead Shape | No Lead |
Increase the current or voltage in your circuit with this SI7308DN-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 3200 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
Contrarreste eficazmente amenazas de drones
Descubra cómo combinar procesamiento inteligente, detección avanzada y respuesta rápida en un sistema de defensa unificado contra los drones.