| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| Enhancement | |
| N | |
| 1 | |
| 150 | |
| ±20 | |
| 1.2 | |
| 375@10V | |
| 5.4@10V | |
| 5.4 | |
| 1140 | |
| 15 | |
| 10 | |
| 20 | |
| 8 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1(Max) |
| Package Width | 1.65 |
| Package Length | 3.05 |
| PCB changed | 6 |
| Standard Package Name | SO |
| Supplier Package | TSOP |
| 6 | |
| Lead Shape | Gull-wing |
This SI3440DV-T1-GE3 power MOSFET from Vishay can be used for amplification in your circuit. Its maximum power dissipation is 1140 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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