| RoHS (Unión Europea) | Compliant |
| ECCN (Estados Unidos) | EAR99 |
| Estatus de pieza | Obsolete |
| Código HTS | 8541.21.00.95 |
| Automotive | No |
| PPAP | No |
| Categoría del producto | Power MOSFET |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 20 |
| Maximum Gate-Source Voltage (V) | ±8 |
| Maximum Gate Threshold Voltage (V) | 0.85 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Continuous Drain Current (A) | 3.9 |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 1 |
| Maximum Drain-Source Resistance (mOhm) | 31@4.5V |
| Typical Gate Charge @ Vgs (nC) | 7.5@4.5V |
| Typical Gate to Drain Charge (nC) | 1.2 |
| Typical Gate to Source Charge (nC) | 1.4 |
| Minimum Gate Threshold Voltage (V) | 0.45 |
| Typical Output Capacitance (pF) | 100 |
| Maximum Power Dissipation (mW) | 1250 |
| Typical Fall Time (ns) | 10 |
| Typical Rise Time (ns) | 30 |
| Typical Turn-Off Delay Time (ns) | 35 |
| Typical Turn-On Delay Time (ns) | 9 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 25@4.5V|30@2.5V|36@1.8V |
| Maximum Positive Gate-Source Voltage (V) | 8 |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 5 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 1.25 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 15 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 166 |
| Typical Diode Forward Voltage (V) | 0.8 |
| Typical Gate Plateau Voltage (V) | 1.4 |
| Typical Reverse Recovery Time (ns) | 13 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Minimum Gate Resistance (Ohm) | 1.1 |
| Maximum Gate Resistance (Ohm) | 3.3 |
| Mounting | Surface Mount |
| Package Height | 1.02(Max) |
| Package Width | 1.4(Max) |
| Package Length | 3.04(Max) |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| Pin Count | 3 |
