| RoHS (Unión Europea) | Compliant with Exemption |
| ECCN (Estados Unidos) | EAR99 |
| Estatus de pieza | Active |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Categoría del producto | Power MOSFET |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 800 |
| Maximum Gate-Source Voltage (V) | ±20 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Continuous Drain Current (A) | 19 |
| Maximum Drain-Source Resistance (mOhm) | 265@10V |
| Typical Gate Charge @ Vgs (nC) | 65@10V |
| Typical Input Capacitance @ Vds (pF) | 2100@100V |
| Maximum Power Dissipation (mW) | 208000 |
| Typical Fall Time (ns) | 60 |
| Typical Rise Time (ns) | 50 |
| Typical Turn-Off Delay Time (ns) | 110 |
| Typical Turn-On Delay Time (ns) | 35 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
