| RoHS (Unión Europea) | Compliant |
| ECCN (Estados Unidos) | EAR99 |
| Estatus de pieza | Active |
| Automotive | Yes |
| PPAP | No |
| Categoría del producto | Power MOSFET |
| Material | SiC |
| Configuration | Dual |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain-Source Voltage (V) | 1200 |
| Maximum Gate-Source Voltage (V) | 22 |
| Operating Junction Temperature (°C) | -40 to 175 |
| Maximum Continuous Drain Current (A) | 42 |
| Maximum Drain-Source Resistance (mOhm) | 38.5@18V |
| Typical Gate Charge @ Vgs (nC) | 110@18V |
| Typical Input Capacitance @ Vds (pF) | 2271@800V |
| Maximum Power Dissipation (mW) | 100000 |
| Typical Fall Time (ns) | 9.4 |
| Typical Rise Time (ns) | 6.6 |
| Typical Turn-Off Delay Time (ns) | 84.8 |
| Typical Turn-On Delay Time (ns) | 19.6 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 175 |
| Mounting | Screw |
| Package Height | 12 |
| Package Width | 33.8 |
| Package Length | 62.8 |
| PCB changed | 18 |
| Supplier Package | PIM |
| Pin Count | 18 |
