| RoHS (Unión Europea) | Compliant |
| ECCN (Estados Unidos) | EAR99 |
| Estatus de pieza | NRND |
| Código HTS | 8541.29.00.95 |
| Automotive | Yes |
| PPAP | Yes |
| Categoría del producto | Power MOSFET |
| Configuration | Single Quad Drain Dual Source |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 20 |
| Maximum Gate-Source Voltage (V) | ±10 |
| Maximum Gate Threshold Voltage (V) | 1.25 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Continuous Drain Current (A) | 7.05 |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 1 |
| Maximum Drain-Source Resistance (mOhm) | 33@4.5V |
| Typical Gate Charge @ Vgs (nC) | 20@4.5V |
| Typical Gate Charge @ 10V (nC) | 4 |
| Typical Gate to Drain Charge (nC) | 7 |
| Typical Gate to Source Charge (nC) | 4 |
| Typical Reverse Recovery Charge (nC) | 30 |
| Typical Input Capacitance @ Vds (pF) | 1375@16V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 200@16V |
| Minimum Gate Threshold Voltage (V) | 0.65 |
| Typical Output Capacitance (pF) | 510 |
| Maximum Power Dissipation (mW) | 2500 |
| Typical Fall Time (ns) | 55|90 |
| Typical Rise Time (ns) | 25|70 |
| Typical Turn-Off Delay Time (ns) | 70|65 |
| Typical Turn-On Delay Time (ns) | 18|22 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Supplier Temperature Grade | Automotive |
| Packaging | Tape and Reel |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 28 |
| Typical Diode Forward Voltage (V) | 0.95 |
| Typical Reverse Recovery Time (ns) | 40 |
| Maximum Diode Forward Voltage (V) | 1.25 |
| Typical Gate Threshold Voltage (V) | 0.9 |
| Maximum Positive Gate-Source Voltage (V) | 10 |
| Mounting | Surface Mount |
| Package Height | 1.5(Max) mm |
| Package Width | 4(Max) mm |
| Package Length | 5(Max) mm |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | SOIC N |
| Pin Count | 8 |
| Lead Shape | Gull-wing |
