| RoHS (Unión Europea) | Compliant |
| ECCN (Estados Unidos) | EAR99 |
| Estatus de pieza | Obsolete-Unconfirmed |
| Automotive | Yes |
| PPAP | Yes |
| Categoría del producto | Power MOSFET |
| Configuration | Single Quad Drain Triple Source |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 60 |
| Maximum Gate-Source Voltage (V) | ±20 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Maximum Continuous Drain Current (A) | 20 |
| Maximum Drain-Source Resistance (mOhm) | 4.7@10V |
| Typical Gate Charge @ Vgs (nC) | 15.7@4.5V|33.7@10V |
| Typical Gate Charge @ 10V (nC) | 33.7 |
| Typical Input Capacitance @ Vds (pF) | 2164@25V |
| Maximum Power Dissipation (mW) | 3700 |
| Typical Fall Time (ns) | 5.1 |
| Typical Rise Time (ns) | 14.9 |
| Typical Turn-Off Delay Time (ns) | 23.6 |
| Typical Turn-On Delay Time (ns) | 10.4 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 175 |
| Supplier Temperature Grade | Automotive |
