| RoHS (Unión Europea) | Compliant |
| Estatus de pieza | Active |
| PPAP | No |
| Categoría del producto | Power MOSFET |
| Configuration | Single Quad Drain Quad Source |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 40 |
| Maximum Gate-Source Voltage (V) | ±20 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Maximum Continuous Drain Current (A) | 207 |
| Maximum Drain-Source Resistance (mOhm) | 1.3@10V |
| Typical Gate Charge @ Vgs (nC) | 21@4.5V|28@6V|47@10V |
| Typical Input Capacitance @ Vds (pF) | 3480@20V |
| Maximum Power Dissipation (mW) | 107000 |
| Typical Fall Time (ns) | 4 |
| Typical Rise Time (ns) | 5 |
| Typical Turn-Off Delay Time (ns) | 43 |
| Typical Turn-On Delay Time (ns) | 18 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 175 |
