| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±8 | |
| 1 | |
| 15 | |
| 5000 | |
| 1 | |
| 6.7@4.5V | |
| 56@4.5V | |
| 5000@10V | |
| 2300 | |
| 170 | |
| 60 | |
| 250 | |
| 13 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.75(Max) |
| Package Width | 3.05 |
| Package Length | 3.05 |
| PCB changed | 8 |
| Standard Package Name | DFN |
| Supplier Package | WDFN EP |
| 8 | |
| Lead Shape | No Lead |
Use ON Semiconductor's NTTFS3A08PZTWG power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 2200 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Sistemas de drones más inteligentes
Equípese con potentes herramientas y estrategias inteligentes para diseñar los sistemas de drones ágiles, eficaces y modulares del futuro.