| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 2.2 | |
| 17.1 | |
| 100 | |
| 1 | |
| 4@10V | |
| 15.9@4.5V|31@10V | |
| 31 | |
| 2516@15V | |
| 8100 | |
| 5.7|4 | |
| 25|21.1 | |
| 23.4|29.3 | |
| 14.4|10.6 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.05(Max) mm |
| Package Width | 5.9 mm |
| Package Length | 4.9 mm |
| PCB changed | 5 |
| Supplier Package | SO-FL EP |
| 5 | |
| Lead Shape | No Lead |
This NTMFS4937NT1G power MOSFET from ON Semiconductor can be used for amplification in your circuit. Its maximum power dissipation is 8100 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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