| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 2.2 | |
| 21.8 | |
| 100 | |
| 1 | |
| 3.2@10V | |
| 22@4.5V|49.4@10V | |
| 49.4 | |
| 3579@15V | |
| 8700 | |
| 6.6|12.1 | |
| 20|18.7 | |
| 27.5|28.3 | |
| 16.3|11.2 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.05(Max) mm |
| Package Width | 5.9 mm |
| Package Length | 4.9 mm |
| PCB changed | 5 |
| Supplier Package | SO-FL EP |
| 5 | |
| Lead Shape | No Lead |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the NTMFS4935NT3G power MOSFET, developed by ON Semiconductor. Its maximum power dissipation is 8700 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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