onsemiMUN5133DW1T1GBJT digital
Trans Digital BJT PNP 50V 0.1A 385mW 6-Pin SC-88 T/R
| Compliant | |
| EAR99 | |
| Active | |
| MUN5133DW1T1G | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Dual | |
| 50 | |
| 0.1 | |
| 80@5mA@10V | |
| 4.7 | |
| -55 to 150 | |
| 0.1 | |
| 0.25@1mA@10mA | |
| 385 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 50 to 120 | |
| Mounting | Surface Mount |
| Package Height | 0.9 mm |
| Package Width | 1.25 mm |
| Package Length | 2 mm |
| PCB changed | 6 |
| Standard Package Name | SOT |
| Supplier Package | SC-88 |
| 6 |
Thanks to ON Semiconductor, easily integrate PNP MUN5133DW1T1G digital transistors into digital signal processing circuits. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 385 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It is made in a dual configuration. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
Sistemas de drones más inteligentes
Equípese con potentes herramientas y estrategias inteligentes para diseñar los sistemas de drones ágiles, eficaces y modulares del futuro.