onsemiMUN5114DW1T1GBJT digital
Trans Digital BJT PNP 50V 0.1A 385mW 6-Pin SC-88 T/R
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Dual | |
| 50 | |
| 0.1 | |
| 80@5mA@10V | |
| 10 | |
| -55 to 150 | |
| 0.21 | |
| 0.25@0.3mA@10mA | |
| 385 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 50 to 120 | |
| Mounting | Surface Mount |
| Package Height | 0.9 mm |
| Package Width | 1.25 mm |
| Package Length | 2 mm |
| PCB changed | 6 |
| Standard Package Name | SOT |
| Supplier Package | SC-88 |
| 6 |
Do you need a device that can offer the benefits of traditional BJTs with the compatibility for digital signal processors? The PNP MUN5114DW1T1G digital transistor from ON Semiconductor is your solution. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 385 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a dual configuration.
| EDA / CAD Models |
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