onsemiMMBT8099LT1GGP BJT

Trans GP BJT NPN 80V 0.5A 300mW 3-Pin SOT-23 T/R

Jump-start your electronic circuit design with this versatile NPN MMBT8099LT1G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

6,000 piezas: Se puede enviar en 2 días

    Total$129.60Price for 3000

    • (3000)

      Se puede enviar en 2 días

      Ships from:
      Países Bajos
      Date Code:
      2416+
      Manufacturer Lead Time:
      42 semanas
      Country Of origin:
      China
      • In Stock: 6,000 piezas
      • Price: $0.0432

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