| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 40 | |
| 4 | |
| 1.3@3mA@50mA | |
| 0.3@3mA@50mA | |
| 0.1 | |
| 75@2mA@4.5V | |
| 300 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.94 mm |
| Package Width | 1.3 mm |
| Package Length | 2.9 mm |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
ON Semiconductor has the solution to your circuit's high-voltage requirements with their NPN MMBT3416LT3G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 4 V. Its maximum power dissipation is 300 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 4 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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