| RoHS (Unión Europea) | Not Compliant |
| ECCN (Estados Unidos) | EAR99 |
| Estatus de pieza | Active |
| Código HTS | 8541.21.00.95 |
| Automotive | No |
| PPAP | No |
| Type | NPN |
| Categoría del producto | Bipolar Power |
| Material | Si |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector-Base Voltage (V) | 75 |
| Maximum Collector-Emitter Voltage (V) | 50 |
| Maximum Base-Emitter Voltage (V) | 6 |
| Operating Junction Temperature (°C) | -65 to 200 |
| Maximum Base-Emitter Saturation Voltage (V) | 1.2@15mA@150mA|2@50mA@500mA |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3@15mA@150mA|1@50mA@500mA |
| Maximum DC Collector Current (A) | 0.8 |
| Maximum Collector Cut-Off Current (nA) | 10000 |
| Minimum DC Current Gain | 50@0.1mA@10V|75@1mA@10V|100@10mA@10V|100@150mA@10V|30@500mA@10V |
| Maximum Power Dissipation (mW) | 500 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Operating Temperature (°C) | 200 |
| Supplier Temperature Grade | Military |
| Supplier Package | Die |
