| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 2500 | |
| ±30 | |
| 5 | |
| 5 | |
| 200 | |
| 50 | |
| 8800@10V | |
| 200@10V | |
| 200 | |
| 8560@25V | |
| 960000 | |
| 44 | |
| 20 | |
| 90 | |
| 33 | |
| -55 | |
| 150 | |
| Mounting | Through Hole |
| Package Height | 21.34(Max) mm |
| Package Width | 5.21(Max) mm |
| Package Length | 16.13(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Supplier Package | PLUS 247 |
| 3 |
Compared to traditional transistors, IXTX5N250 power MOSFETs, developed by Ixys Corporation, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 960000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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