| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 100 | |
| ±20 | |
| 50 | |
| 55@10V | |
| 140@10V | |
| 140 | |
| 4200@25V | |
| 300000 | |
| 38 | |
| 39 | |
| 86 | |
| 46 | |
| -55 | |
| 150 | |
| Mounting | Through Hole |
| Package Height | 21.46(Max) |
| Package Width | 5.3(Max) |
| Package Length | 16.26(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247AD |
| 3 |
Create an effective common drain amplifier using this IXTH50P10 power MOSFET from Ixys Corporation. Its maximum power dissipation is 300000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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