| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 75 | |
| ±20 | |
| 4.5 | |
| 80 | |
| 100 | |
| 5 | |
| 24@10V | |
| 103@10V | |
| 103 | |
| 3600@25V | |
| 357000 | |
| 12 | |
| 35 | |
| 40 | |
| 15 | |
| -55 | |
| 150 | |
| Tube | |
| Mounting | Surface Mount |
| Package Height | 4.83(Max) |
| Package Width | 9.4(Max) |
| Package Length | 10.41(Max) |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO-263 |
| Supplier Package | D2PAK |
| 3 | |
| Lead Shape | Gull-wing |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the IXTA80N075L2 power MOSFET, developed by Ixys Corporation. Its maximum power dissipation is 357000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes linear l2 technology.
| EDA / CAD Models |
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