| Compliant with Exemption | |
| EAR99 | |
| Active | |
| EA | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±30 | |
| 64 | |
| 85@10V | |
| 150@10V | |
| 150 | |
| 9700@25V | |
| 830000 | |
| 22 | |
| 25 | |
| 85 | |
| 30 | |
| -55 | |
| 150 | |
| Mounting | Through Hole |
| Package Height | 21.34(Max) mm |
| Package Width | 5.21(Max) mm |
| Package Length | 16.13(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Supplier Package | PLUS 247 |
| 3 |
Use Ixys Corporation's IXFX64N50P power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 830000 mW. This N channel MOSFET transistor operates in enhancement mode. This device is made with polar hiperfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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