| RoHS (Unión Europea) | Compliant |
| ECCN (Estados Unidos) | EAR99 |
| Estatus de pieza | Active |
| Código HTS | COMPONENTS |
| Automotive | No |
| PPAP | No |
| Categoría del producto | Power MOSFET |
| Configuration | Single |
| Process Technology | HEXFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 60 |
| Maximum Gate-Source Voltage (V) | ±16 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Continuous Drain Current (A) | 2.7 |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 20 |
| Maximum Drain-Source Resistance (mOhm) | 92@10V |
| Typical Gate Charge @ Vgs (nC) | 2.5@4.5V |
| Typical Gate to Drain Charge (nC) | 1.3 |
| Typical Gate to Source Charge (nC) | 0.7 |
| Typical Reverse Recovery Charge (nC) | 13 |
| Typical Input Capacitance @ Vds (pF) | 290@25V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 21@25V |
| Minimum Gate Threshold Voltage (V) | 1 |
| Typical Output Capacitance (pF) | 37 |
| Maximum Power Dissipation (mW) | 1250 |
| Typical Fall Time (ns) | 4.2 |
| Typical Rise Time (ns) | 6.3 |
| Typical Turn-Off Delay Time (ns) | 6.8 |
| Typical Turn-On Delay Time (ns) | 5.4 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 78@10V|98@4.5V |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 11 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 100 |
| Typical Gate Plateau Voltage (V) | 3.5 |
| Typical Reverse Recovery Time (ns) | 14 |
| Maximum Diode Forward Voltage (V) | 1.3 |
| Maximum Positive Gate-Source Voltage (V) | 16 |
| Mounting | Surface Mount |
| Package Height | 0.95 |
| Package Width | 1.3 |
| Package Length | 2.92 |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| Pin Count | 3 |
| Lead Shape | Gull-wing |
