| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| 0.3um | |
| Enhancement | |
| P | |
| 1 | |
| 200 | |
| ±20 | |
| 4 | |
| -55 to 150 | |
| 1.9 | |
| 100 | |
| 100 | |
| 3000@10V | |
| 8.9(Max)@10V | |
| 8.9(Max) | |
| 3.9(Max) | |
| 2.1(Max) | |
| 560 | |
| 170@25V | |
| 16@25V | |
| 2 | |
| 54 | |
| 2500 | |
| 13 | |
| 12 | |
| 11 | |
| 8 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 20 | |
| 7.6 | |
| 110 | |
| 5.8 | |
| Mounting | Surface Mount |
| Package Height | 2.39(Max) |
| Package Width | 6.22(Max) |
| Package Length | 6.73(Max) |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | DPAK |
| 3 |
Make an effective common gate amplifier using this IRFR9210TRPBF power MOSFET from Vishay. Its maximum power dissipation is 2500 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This device utilizes HEXFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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