| Compliant | |
| EAR99 | |
| Active | |
| 8541.10.00.80 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 5.5 | |
| 750@10V | |
| 49(Max)@10V | |
| 49(Max) | |
| 1400@25V | |
| 60000 | |
| 22 | |
| 25 | |
| 30 | |
| 13 | |
| -55 | |
| 150 | |
| Mounting | Through Hole |
| Package Height | 16.12(Max) mm |
| Package Width | 4.83(Max) mm |
| Package Length | 10.63(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220FP |
| 3 | |
| Lead Shape | Through Hole |
Increase the current or voltage in your circuit with this IRFIB6N60APBF power MOSFET from Vishay. Its maximum power dissipation is 60000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Sistemas de drones más inteligentes
Equípese con potentes herramientas y estrategias inteligentes para diseñar los sistemas de drones ágiles, eficaces y modulares del futuro.