| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 60 | |
| ±20 | |
| 4 | |
| 5.3 | |
| 500@10V | |
| 12(Max)@10V | |
| 12(Max) | |
| 5.1(Max) | |
| 3.8(Max) | |
| 96 | |
| 270@25V | |
| 170 | |
| 27000 | |
| 31 | |
| 63 | |
| 9.6 | |
| 11 | |
| -55 | |
| 175 | |
| Mounting | Through Hole |
| Package Height | 16.12(Max) |
| Package Width | 4.83(Max) |
| Package Length | 10.63(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220 Full-Pak |
| 3 | |
| Lead Shape | Through Hole |
Create an effective common drain amplifier using this IRFI9Z14GPBF power MOSFET from Vishay. Its maximum power dissipation is 27000 mW. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
Sistemas de drones más inteligentes
Equípese con potentes herramientas y estrategias inteligentes para diseñar los sistemas de drones ágiles, eficaces y modulares del futuro.