Infineon Technologies AGIPW60R099CPAFKSA1MOSFETs
Trans MOSFET N-CH 600V 31A 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±20 | |
| 3.5 | |
| 31 | |
| 105@10V | |
| 60@10V | |
| 60 | |
| 2800@100V | |
| 255000 | |
| 5 | |
| 5 | |
| 60 | |
| 10 | |
| -40 | |
| 150 | |
| Tube | |
| 90@10V | |
| Mounting | Through Hole |
| Package Height | 21.1(Max) mm |
| Package Width | 5.16(Max) mm |
| Package Length | 16.03(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247 |
| 3 | |
| Lead Shape | Through Hole |
Increase the current or voltage in your circuit with this IPW60R099CPAFKSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 255000 mW. This MOSFET transistor has a minimum operating temperature of -40 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Sistemas de drones más inteligentes
Equípese con potentes herramientas y estrategias inteligentes para diseñar los sistemas de drones ágiles, eficaces y modulares del futuro.