Infineon Technologies AGIPB60R299CPAATMA1MOSFETs
Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±20 | |
| 3.5 | |
| 11 | |
| 299@10V | |
| 22@10V | |
| 22 | |
| 1100@100V | |
| 96000 | |
| 5 | |
| 5 | |
| 40 | |
| 10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 34 | |
| Mounting | Surface Mount |
| Package Height | 4.4 mm |
| Package Width | 9.25 mm |
| Package Length | 10 mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | D2PAK |
| 3 | |
| Lead Shape | Gull-wing |
Increase the current or voltage in your circuit with this IPB60R299CPAATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 96000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device utilizes coolmos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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