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Infineon Technologies AGIPA60R125C6XKSA1MOSFETs
Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-220FP Tube
| Compliant | |
| EAR99 | |
| NRND | |
| 8541.29.00.55 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| 20 | |
| 3.5 | |
| 30 | |
| 125@10V | |
| 96@10V | |
| 96 | |
| 2127@100V | |
| 34000 | |
| 7 | |
| 12 | |
| 83 | |
| 15 | |
| -55 | |
| 150 | |
| Tube | |
| 110@10V | |
| Mounting | Through Hole |
| Package Height | 16 mm |
| Package Width | 4.7 mm |
| Package Length | 10.5 mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220FP |
| 3 | |
| Lead Shape | Through Hole |
As an alternative to traditional transistors, the IPA60R125C6XKSA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 34000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device utilizes coolmos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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