| RoHS (Unión Europea) | Compliant |
| ECCN (Estados Unidos) | EAR99 |
| Estatus de pieza | Active |
| Código HTS | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| Categoría del producto | Power MOSFET |
| Configuration | Dual Dual Drain |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain-Source Voltage (V) | 60 |
| Maximum Gate-Source Voltage (V) | ±20 |
| Operating Junction Temperature (°C) | 150 |
| Maximum Continuous Drain Current (A) | 13.5 |
| Maximum Drain-Source Resistance (mOhm) | 11.5@10V |
| Typical Gate Charge @ Vgs (nC) | 10.8@4.5V|22@10V |
| Typical Gate Charge @ 10V (nC) | 22 |
| Typical Input Capacitance @ Vds (pF) | 1400@30V |
| Maximum Power Dissipation (mW) | 3000 |
| Typical Fall Time (ns) | 11 |
| Typical Rise Time (ns) | 8.5 |
| Typical Turn-Off Delay Time (ns) | 43 |
| Typical Turn-On Delay Time (ns) | 15 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Mounting | Surface Mount |
| Package Width | 5.8(Max) mm |
| Package Length | 5(Max) mm |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | HSOP EP |
| Pin Count | 8 |
