Diodes IncorporatedFZT717TAGP BJT
Trans GP BJT PNP 12V 3A 3000mW 4-Pin(3+Tab) SOT-223 T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Single Dual Collector | |
| 1 | |
| 12 | |
| 12 | |
| 5 | |
| 1.05@50mA@3A | |
| 0.02@10mA@0.1A|0.15@10mA@1A|0.32@50mA@3A | |
| 3 | |
| 300@10mA@2V|300@100mA@2V|160@3A@2V|60@8A@2V|45@10A@2V | |
| 3000 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.6 |
| Package Width | 3.5 |
| Package Length | 6.5 |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | SOT |
| Supplier Package | SOT-223 |
| 4 | |
| Lead Shape | Gull-wing |
Add switching and amplifying capabilities to your electronic circuit with this PNP FZT717TA GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 12 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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