Diodes IncorporatedDXT5551P5-13GP BJT
Trans GP BJT NPN 160V 0.6A 2250mW 3-Pin(2+Tab) PowerDI 5 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single | |
| 1 | |
| 180 | |
| 160 | |
| 6 | |
| 1@1mA@10mA|1.2@5mA@50mA | |
| 0.15@1mA@10mA|0.2@5mA@50mA | |
| 0.6 | |
| 80@10mA@5V|30@50mA@5V|80@1mA@5V | |
| 2250 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.1(Max) |
| Package Width | 5.37 |
| Package Length | 3.97 |
| PCB changed | 2 |
| Tab | Tab |
| Supplier Package | PowerDI 5 |
| 3 |
Implement this NPN DXT5551P5-13 GP BJT from Diodes Zetex to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 2250 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 160 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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