| RoHS (Unión Europea) | Compliant |
| ECCN (Estados Unidos) | EAR99 |
| Estatus de pieza | Obsolete |
| Código HTS | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| Categoría del producto | Power MOSFET |
| Material | SiC |
| Configuration | Dual |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain-Source Voltage (V) | 1200 |
| Maximum Gate-Source Voltage (V) | 25 |
| Maximum Gate Threshold Voltage (V) | 2.6(Typ) |
| Operating Junction Temperature (°C) | -40 to 150 |
| Maximum Continuous Drain Current (A) | 200(Typ) |
| Maximum Gate-Source Leakage Current (nA) | 1500 |
| Maximum IDSS (uA) | 3000 |
| Maximum Drain-Source Resistance (mOhm) | 16@20V |
| Typical Gate Charge @ Vgs (nC) | 378@20V |
| Typical Input Capacitance @ Vds (pF) | 6470@800V |
| Maximum Power Dissipation (mW) | 1000000(Typ) |
| Typical Fall Time (ns) | 22 |
| Typical Rise Time (ns) | 34 |
| Typical Turn-Off Delay Time (ns) | 70 |
| Typical Turn-On Delay Time (ns) | 38 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 125 |
| Supplier Temperature Grade | Industrial |
| Packaging | Box |
| Mounting | Screw |
| Package Width | 61.4 |
| Package Length | 106.4 |
| PCB changed | 7 |
| Pin Count | 7 |
