| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| Automotive | Unknown |
| Power MOSFET | |
| Dual Dual Drain | |
| Enhancement | |
| P | |
| 2 | |
| 30 | |
| ±20 | |
| 7.1 | |
| 25@10V | |
| 9.6@4.5V|19@10V | |
| 19 | |
| 1040@15V | |
| 2000 | |
| 9 | |
| 5.5 | |
| 26 | |
| 10 | |
| -55 | |
| 150 | |
| 17@10V|27@4.5V | |
| Mounting | Surface Mount |
| Package Height | 1.5 mm |
| Package Width | 3.9 mm |
| Package Length | 4.9 mm |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | SOIC |
| 8 | |
| Lead Shape | Gull-wing |
Make an effective common source amplifier using this AO4813 power MOSFET from Alpha & Omega Semiconductor. Its maximum power dissipation is 2000 mW. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
Contrarreste eficazmente amenazas de drones
Descubra cómo combinar procesamiento inteligente, detección avanzada y respuesta rápida en un sistema de defensa unificado contra los drones.