STMicroelectronics2STN1360GP BJT
Trans GP BJT NPN 60V 3A 1600mW 4-Pin(3+Tab) SOT-223 T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single Dual Collector | |
| 1 | |
| 80 | |
| 60 | |
| 6 | |
| 1.2@100mA@2A | |
| 0.3@100mA@2A|0.5@150mA@3A | |
| 3 | |
| 100 | |
| 80@100mA@2V|160@1A@2V | |
| 1600 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Industrial | |
| Mounting | Surface Mount |
| Package Height | 1.8(Max) |
| Package Width | 3.5 |
| Package Length | 6.5 |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | SOT |
| Supplier Package | SOT-223 |
| 4 | |
| Lead Shape | Gull-wing |
The NPN 2STN1360 general purpose bipolar junction transistor, developed by STMicroelectronics, is the perfect solution for your high-current density needs. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1600 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |
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