Central Semiconductor2N2219A PBFREEGP BJT
Trans GP BJT NPN 40V 0.8A 800mW 3-Pin TO-39 Box
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 75 | |
| 40 | |
| 6 | |
| -65 to 200 | |
| 1.2@15mA@150mA|2@50mA@500mA | |
| 0.3@15mA@150mA|1@50mA@500mA | |
| 0.8 | |
| 10 | |
| 35@100uA@10V|50@1mA@10V|75@10mA@10V|50@150mA@1V|100@150mA@10V|40@500mA@10V | |
| 800 | |
| -65 | |
| 200 | |
| Box | |
| Diameter | 8.96 |
| Mounting | Through Hole |
| Package Height | 6.35 |
| PCB changed | 3 |
| Standard Package Name | TO |
| Supplier Package | TO-39 |
| 3 | |
| Lead Shape | Through Hole |
Central Semiconductor brings you the solution to your high-voltage BJT needs with their NPN 2N2219A PBFREE general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 800 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |
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