NXP Semiconductors Diodes, Transistors and Thyristors
1,135 NXP Semiconductors Diodes, Transistors and Thyristors
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| Nº de referencia | Precio | Existencias | Fabricante | Categoría | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Mode of Operation | Minimum Tuning Ratio | Maximum Voltage Regulation - (mV) | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Regulator Current - (mA) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Power 1dB Compression - (dBm) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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A5G26S008NT6
Air Fast RF Power GAN Transistor
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Existencias
5,000
$18.07
Por unidad
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NXP Semiconductors | BJT RF | 2690 | Tape and Reel | 6 | DFN EP | DFN | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF300AN-81MHZ
Trans RF MOSFET N-CH 133V 3-Pin(3+Tab) TO-247 Tube
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Existencias
2
$686.30
Por unidad
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NXP Semiconductors | RF MOSFETs | MOSFET | N | Single | Enhancement | 1 | CW | 133 | 10 | 272000 | 403@50V | 28.2 | 1.8 | 330(Typ) | 250 | Tube | 3 | TO-247 | TO | No | No | No | No | 3B992 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Más Buscadas
BFU550XAR
Trans RF BJT NPN 16V 0.08A 450mW Automotive 4-Pin SOT-143B T/R
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$0.1821
Por unidad
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NXP Semiconductors | BJT RF | NPN | Si | Single Dual Emitter | 16 | 30 | 1 | 3 | 0.08 | 8V/25mA | 450 | 50 to 120 | 60@15mA@8V | 0.72 | 26.5 | 13.5(Typ) | 23 | 11000(Typ) | 1.3(Min) | Tape and Reel | 4 | SOT-143B | SOT | No | Yes | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Más Buscadas
BB173X
Varactor Diode Single 35V 34.65pF 2-Pin SOD-523 T/R
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Desde $0.1402 hasta $0.1693
Por unidad
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NXP Semiconductors | Varactores | VCO | VHF | Single | 35 | 0.01 | 0.02 | 13.5 | 1V/28V | 34.65@1V | Tape and Reel | 2 | SOD-523 | SOD | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Más Buscadas
BB201,215
Diode VAR Cap Dual Common Cathode 15V 89pF 3-Pin TO-236AB T/R
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NXP Semiconductors | Varactores | Tuner|VCO | Dual Common Cathode | 15 | 0.01 | 0.02 | 3.1 | 1V/7.5V | 89@1V | Tape and Reel | 3 | TO-236AB | TO | No | Unknown | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF1118R,215
Trans RF FET 3V 0.01A 4-Pin(3+Tab) SOT-143R T/R
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NXP Semiconductors | RF MOSFETs | Si | Single | Depletion | 1 | 3 | 7 | 0.01 | 23.3@0V | 1 | 1000 | Tape and Reel | 4 | SOT-143R | SOT | No | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BLF6G10LS-135R,112
Trans RF MOSFET N-CH 65V 32A 3-Pin SOT-502B Blister
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NXP Semiconductors | RF MOSFETs | N | Single | Enhancement | 1 | 2-Carrier W-CDMA | 65 | 13 | 32 | 100(Typ)@6.15V | 21 | 700 | 26.5(Typ) | 1000 | 0.14um | Blister | 3 | SOT-502B | SOT | No | No | Unknown | Unknown | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BTA216-600D,127
TRIAC 600V 150A 3-Pin(3+Tab) TO-220AB Rail
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NXP Semiconductors | TRIACs | 30(Min) | 100 | 1.5 | 600 | 5 | 15 | 1.5@20A | 600 | 0.5 | Rail | 3 | TO-220AB | TO | No | Unknown | Unknown | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFG425W
Trans RF BJT NPN 4.5V 0.03A 135mW 4-Pin(3+Tab) CMPAK
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NXP Semiconductors | BJT RF | NPN | Si | Single Dual Emitter | 4.5 | 10 | 1 | 1 | 0.03 | 2V/25mA | 135 | 50 to 120 | 50@25mA@2V | 0.3 | 20 | 12(Typ) | 22 | 25000(Typ) | 1.2(Typ) | 4 | CMPAK | SOT | No | Unknown | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BFG505,215
Trans RF BJT NPN 15V 0.018A 150mW 4-Pin(3+Tab) SOT-143B T/R
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NXP Semiconductors | BJT RF | NPN | Si | Single Dual Emitter | 15 | 20 | 1 | 2.5 | 0.018 | 150 | 50 to 120 | 60@5mA@6V | 20 | 9000(Typ) | 2.1 | Tape and Reel | 4 | SOT-143B | SOT | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PSMN3R2-25YLC,115
Trans MOSFET N-CH 25V 100A 5-Pin(4+Tab) LFPAK T/R
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NXP Semiconductors | MOSFETs | Power MOSFET | N | Single Triple Source | Enhancement | 1 | 25 | 20 | 79000 | 100 | 3.4@10V | 26@10V|30@10V|14@4.5V | 26|30 | 1781@12V | Tape and Reel | 5 | LFPAK | FPAK | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF8S9120NR3
Trans RF MOSFET N-CH 70V 3-Pin Case 2021-0 T/R
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NXP Semiconductors | RF MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA|CDMA | 70 | 10 | 19.8 | 700 | 33(Typ) | 960 | Tape and Reel | 3 | Case 2021-0 | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAP65LX,315
Diode PIN Attenuator/Switch 30V 100mA 2-Pin SOD T/R Automotive AEC-Q101
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NXP Semiconductors | PIN | Attenuator|Switch | Single | 30 | 100 | 0.9@10mA | 1.1@50mA | 0.95@5mA | 135 | 0.7@3V | 0.18 | 2 | SOD | SOD | No | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BT169B,126
SCR Diode 200V 0.8A(RMS) 9A 3-Pin SPT Ammo
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NXP Semiconductors | Silicon Controlled Rectifiers - SCRs | 800(Typ) | 50 | 0.8 | 200 | 0.2 | 5 | 1.7@1.2A | 5 | 0.8 | 200 | 0.5 | 0.1 | Ammo | 3 | SPT | No | Unknown | No | Unknown | Unknown | Unknown | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AFV141KGSR5 RF POWER LDMOS TRANSISTORS |
Desde $707.34 hasta $738.00
Por unidad
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NXP Semiconductors | RF MOSFETs | Pulse | 17.7 | 1200 | 1000 | 1400 | Tape and Reel | 5 | NI-1230S | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2T21S160-12SR3 RF Power LDMOS Transistor |
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NXP Semiconductors | RF MOSFETs | 2110 | 2170 | Tape and Reel | 5 | CFMF | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BZX884-B30,315
Zener Diode Single 30V 2% 80Ohm 250mW Automotive AEC-Q101 2-Pin DFN T/R
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NXP Semiconductors | Zener | Voltage Regulator | Single | 30 | 2% | 2 | 0.9 | 0.05 | 80 | 250 | 250 | 50 | Tape and Reel | 2 | DFN | DFN | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMEG2005EPK,315
Diode Schottky 0.7A 2-Pin DFN-D T/R
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NXP Semiconductors | Rectifiers | Schottky Diode | Single | 0.7 | 3 | 0.41@0.5A | 300 | 1470 | 3(Typ) | Tape and Reel | 2 | DFN-D | DFN | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF1102,115
Trans RF MOSFET N-CH 7V 0.04A 6-Pin TSSOP T/R
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NXP Semiconductors | RF MOSFETs | N | Dual | Enhancement | 2 | 7 | 6 | 200 | 0.04 | 2.8@5V@Gate 1|7(Max)@5V@Gate 2 | 2.8 | Tape and Reel | 6 | TSSOP | SO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AFG24S100HR5 Wide Band RF Power Gan Transistor, 1-2690 MHz, 125 W CW, 50 V |
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NXP Semiconductors | RF MOSFETs | 3 | NI-360H-2SB | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BZV55-B7V5,115
Diode Zener Single 7.5V 2% 500mW 2-Pin Mini-MELF T/R
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NXP Semiconductors | Zener | Voltage Regulator | Single | 7.5 | 2% | 5 | 0.9 | 1 | 15 | 500 | 150 | Tape and Reel | 2 | Mini-MELF | MELF | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AFT23H160-25SR3 High Reliability RF FET IC |
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NXP Semiconductors | RF MOSFETs | 16.7 | 2300 | 2400 | Tape and Reel | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF5S9080NBR1
Trans RF MOSFET N-CH 65V 5-Pin TO-272 W T/R
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NXP Semiconductors | RF MOSFETs | N | Single Dual Drain Dual Gate | Enhancement | 1 | GSM|GSM EDGE | 65 | 15 | 18.5|19 | 869 | 80 | 960 | Tape and Reel | 5 | TO-272 W | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFG541,115
Trans RF BJT NPN 15V 0.12A 650mW 4-Pin(3+Tab) SC-73 T/R
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NXP Semiconductors | BJT RF | NPN | Si | Single Dual Emitter | 15 | 20 | 1 | 2.5 | 0.12 | 8V/40mA | 650 | 50 to 120 | 60@40mA@8V | 1 | 15 | 21(Typ) | 34 | 9000(Typ) | 1.8 | Tape and Reel | 4 | SC-73 | No | Unknown | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A3T23H450W23SR6 RF Power LDMOS Transistor |
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NXP Semiconductors | RF MOSFETs | 2300 | 2400 | Tape and Reel | 7 | ACP-1230S-4L2S | No | No | No | No | EAR99 | Yes | No |