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VRF141|MICROCHP|simage
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RF FETs

VRF141

Trans RF MOSFET N-CH 80V 20A 4-Pin Style M-174 Box

Microchip Technology
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Material
    Si
  • Configuration
    Single Dual Source
  • Channel Mode
    Depletion
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Mode of Operation
    Class-A
  • Maximum Drain-Source Voltage (V)
    80
  • Maximum Gate-Source Voltage (V)
    ±40
  • Maximum Gate Threshold Voltage (V)
    4.4
  • Maximum VSWR
    30
  • Maximum Continuous Drain Current (A)
    20
  • Maximum Gate-Source Leakage Current (nA)
    1000
  • Maximum IDSS (uA)
    1000
  • Typical Input Capacitance @ Vds (pF)
    400@28V
  • Typical Reverse Transfer Capacitance @ Vds (pF)
    50@28V
  • Typical Output Capacitance @ Vds (pF)
    375@28V
  • Typical Forward Transconductance (S)
    5(Min)
  • Maximum Power Dissipation (mW)
    300000
  • Maximum Output Power (W)
    150
  • Typical Power Gain (dB)
    23
  • Maximum Frequency (MHz)
    175
  • Typical Drain Efficiency (%)
    45
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    200
  • Packaging
    Box
  • Mounting
    Screw
  • Package Height
    7.11(Max)
  • Package Width
    12.83(Max)
  • Package Length
    24.89(Max)
  • PCB changed
    4
  • Supplier Package
    Style M-174
  • Pin Count
    4

Documentation and Resources

Datasheets
Design resources