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UT6JC5TCR|ROHM|simage
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MOSFETs

UT6JC5TCR

Trans MOSFET P-CH 60V 2.5A 8-Pin HUML T/R

ROHM Semiconductor
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Dual
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    2
  • Maximum Drain-Source Voltage (V)
    60
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Continuous Drain Current (A)
    2.5
  • Maximum Drain-Source Resistance (mOhm)
    280@10V
  • Typical Gate Charge @ Vgs (nC)
    3.2@4.5V|6.3@10V
  • Typical Input Capacitance @ Vds (pF)
    265@30V
  • Maximum Power Dissipation (mW)
    2000
  • Typical Fall Time (ns)
    18
  • Typical Rise Time (ns)
    5
  • Typical Turn-Off Delay Time (ns)
    42
  • Typical Turn-On Delay Time (ns)
    7.4
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.6(Max)
  • Package Width
    2.1(Max)
  • Package Length
    2.1(Max)
  • PCB changed
    8
  • Supplier Package
    HUML
  • Pin Count
    8

Documentation and Resources

Datasheets
Design resources