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MOSFETs

US6K1TR

Trans MOSFET N-CH Si 30V 1.5A 6-Pin TUMT T/R

ROHM Semiconductor
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    NRND
  • HTS
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    Si
  • Configuration
    Dual
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    2
  • Maximum Drain-Source Voltage (V)
    30
  • Maximum Gate-Source Voltage (V)
    12
  • Maximum Continuous Drain Current (A)
    1.5
  • Maximum Drain-Source Resistance (mOhm)
    240@4.5V
  • Typical Gate Charge @ Vgs (nC)
    1.6@4.5V
  • Typical Input Capacitance @ Vds (pF)
    80@10V
  • Maximum Power Dissipation (mW)
    1000
  • Typical Fall Time (ns)
    6
  • Typical Rise Time (ns)
    9
  • Typical Turn-Off Delay Time (ns)
    15
  • Typical Turn-On Delay Time (ns)
    7
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.82(Max)
  • Package Width
    1.8(Max)
  • Package Length
    2.1(Max)
  • PCB changed
    6
  • Standard Package Name
    SOT
  • Supplier Package
    TUMT
  • Pin Count
    6
Order Quantity

Documentation and Resources

Datasheets
Design resources