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TW048N65CS1F|TOSHIBA|simage
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MOSFETs

TW048N65C,S1F

Trans MOSFET N-CH SiC 650V 40A 3-Pin(3+Tab) TO-247

Toshiba
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    SiC
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    650
  • Maximum Gate-Source Voltage (V)
    25
  • Maximum Continuous Drain Current (A)
    40
  • Maximum Drain-Source Resistance (mOhm)
    65@18V
  • Typical Gate Charge @ Vgs (nC)
    41@18V
  • Typical Input Capacitance @ Vds (pF)
    1362@400V
  • Maximum Power Dissipation (mW)
    132000
  • Typical Fall Time (ns)
    32
  • Typical Rise Time (ns)
    43
  • Mounting
    Through Hole
  • Package Height
    20.95
  • Package Width
    5.02
  • Package Length
    15.94
  • PCB changed
    3
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    TO-247
  • Pin Count
    3
Order Quantity

Documentation and Resources

Datasheets
Design resources