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TSM150P03PQ33RGG|TSC|simage
TSM150P03PQ33RGG|TSC|limage
MOSFETs

TSM150P03PQ33 RGG

Trans MOSFET P-CH 30V 36A 8-Pin PDFN EP T/R

Taiwan Semiconductor
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    30
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    2.5
  • Maximum Continuous Drain Current (A)
    36
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    15@10V
  • Typical Gate Charge @ Vgs (nC)
    14.3@4.5V|29.3@10V
  • Typical Gate Charge @ 10V (nC)
    29.3
  • Typical Input Capacitance @ Vds (pF)
    1829@15V
  • Maximum Power Dissipation (mW)
    2300
  • Typical Fall Time (ns)
    14.4
  • Typical Rise Time (ns)
    21.8
  • Typical Turn-Off Delay Time (ns)
    59.8
  • Typical Turn-On Delay Time (ns)
    9
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.75
  • Package Width
    3.1
  • Package Length
    3.1
  • PCB changed
    8
  • Standard Package Name
    DFN
  • Supplier Package
    PDFN EP
  • Pin Count
    8
Order Quantity

Documentation and Resources

Datasheets
Design resources