MOSFETs

TQM048NH10LCR RLG

Trans MOSFET N-CH Si 100V 146A 8-Pin PDFN-U EP Automotive AEC-Q101

Taiwan Semiconductor

Product Technical Specifications

• EU RoHS

  Compliant with Exemption

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  8541.29.00.55

• SVHC

  Yes

• SVHC Exceeds Threshold

  Yes

• Automotive

  Yes

• PPAP

  Unknown

• Category

  Power MOSFET

• Material

  Si

• Configuration

  Single Quad Drain Triple Source

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  100

• Maximum Gate-Source Voltage (V)

  ±20

• Operating Junction Temperature (°C)

  -55 to 175

• Maximum Continuous Drain Current (A)

  146

• Maximum Drain-Source Resistance (mOhm)

  4.8@10V

• Typical Gate Charge @ Vgs (nC)

  24@4.5V|47@10V

• Typical Gate Charge @ 10V (nC)

  47

• Typical Input Capacitance @ Vds (pF)

  2964@60V

• Maximum Power Dissipation (mW)

  224000

• Typical Fall Time (ns)

  82

• Typical Rise Time (ns)

  40

• Typical Turn-Off Delay Time (ns)

  52

• Typical Turn-On Delay Time (ns)

  12

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  175

• Supplier Temperature Grade

  Automotive

• Mounting

  Surface Mount

• Package Height

  1.05(Max)

• Package Width

  5.8(Max)

• Package Length

  5(Max)

• PCB changed

  8

• Standard Package Name

  DFN

• Supplier Package

  PDFN-U EP

• Pin Count

  8