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TPWR6003PLL1Q|TOSHIBA|simage
TPWR6003PLL1Q|TOSHIBA|limage
MOSFETs

TPWR6003PL,L1Q

Trans MOSFET N-CH Si 30V 412A 8-Pin DSOP EP Advance T/R

Toshiba
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    Si
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    30
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    2.1
  • Maximum Continuous Drain Current (A)
    412
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    10
  • Maximum Drain-Source Resistance (mOhm)
    600@10V
  • Typical Gate Charge @ Vgs (nC)
    52@4.5V|110@10V
  • Typical Gate Charge @ 10V (nC)
    110
  • Typical Input Capacitance @ Vds (pF)
    7700@15V
  • Maximum Power Dissipation (mW)
    3000
  • Typical Fall Time (ns)
    10
  • Typical Rise Time (ns)
    12
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.73
  • Package Width
    5
  • Package Length
    5
  • PCB changed
    8
  • Standard Package Name
    SO
  • Supplier Package
    DSOP EP Advance
  • Pin Count
    8
  • Lead Shape
    Flat

Documentation and Resources

Datasheets
Design resources